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The most important difference between the ERF7530 and the IRFP250 is the input capacitance. The 7530 input capacitance runs between 2.18 nF and 2.10 nF not bad.
The IRFP250 input capacitance runs between 4.22 nF and 4.19 nF.
Interesting Note: They are both N channel ENHANCED MODE. The enhanced mode means that they both conduct a small amount "Magnetizing Current" without having to biased in the on condition.
Which also means the ERF7530 is a switching transistor.
The differences in input capacitance, the IRFP250 is almost double the ERF7530.
I don't think it matters very much at 10 meters and lower. A good circuit design can negate this small difference. We are dealing with nano Farads not micro Farads.
The 4.13 nF converted to uf is .00413 uF not too hard to compensate for.

[QUOTE="Tallman, post: 607802, member: 32129"] The most important difference between the ERF7530 and the IRFP250 is the input capacitance. The 7530 input capacitance runs between 2.18 nF and 2.10 nF not bad. The IRFP250 input capacitance runs between 4.22 nF and 4.19 nF. Interesting Note: They are both N channel ENHANCED MODE. The enhanced mode means that they both conduct a small amount "Magnetizing Current" without having to biased in the on condition. Which also means the [B]ERF7530 is a[/B] [B]switching transistor.[/B] The differences in input capacitance, the IRFP250 is almost double the ERF7530. I don't think it matters very much at 10 meters and lower. A good circuit design can negate this small difference. We are dealing with nano Farads not micro Farads. The 4.13 nF converted to uf is .00413 uF not too hard to compensate for. [/QUOTE]

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