The HG-2SC2312 have arrived.
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hFE of 47 and 51, quite well matched.
@ [USER=10801]DoctorAudio[/USER]: it was a good tip to get these
. I replaced both finals and set the bias to 40mA for each (50mA for the driver TR43 according to the manual). I re-did the Tx alignment and now the amplitudes of the RF signals are ok
.
For the AM carrier unmodulated, I have limited the RF output voltage (measured with the oscilloscope on the dummy load) to 65V p-p, corresonding to 10W, right on spec.
In AM with 100% modulation the excursion is nearly 120V p-p, corresonding to 35W PEP - wow!
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In SSB, with the 2-tone signal on the mic, I get 86V p-p max excursion, corresponding to 18W PEP, slightly short of the 21W in the specs for this kit.
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I guess this is good enough, but there is still one thing that puzzles me. Why do I get a much higher voltage excursion in RF output for AM than for SSB? In AM I can go even higher than 120V p-p (with 100% modulation) if I turn up the AM carrier power (VR-13). But in SSB I cannot go higher than 86V p-p.
I measured the amplitude at the base of the driver (TR43):
- in AM Tx: 9V p-p
- in SSB Tx: 1.8V p-p
So the signal at the base of the driver is a lot smaller in SSB. I guess this must be the reason, even if in SSB the finals work in class AB, with the full 13.8V DC applied at the collectors.
I should say that I tweaked very carefully the coils upstream of the RF amplifier (L45, L46, L48 and L49) in SSB for max output, so it must be something else...
Any suggestion is welcome!