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All of the high power RF MOSFET's I've personally tested are showing a negative temperature coefficient when operated any where near rated output. That is different than a standard FET. Interestingly enough, I can detect a barley measurable positive coefficient at very low drive levels but, they act just like bipolar transistors at normal operating levels. The higher voltage ones are extremely susceptible to thermal runaway without careful bias design.

PS: While I have seen this same characteristic in several 50 volt MOSFET's, I am curious to know if anyone can confirm the coefficient seen with the BLF-188XR?

[QUOTE="Shockwave, post: 727004, member: 10882"] All of the high power RF MOSFET's I've personally tested are showing a negative temperature coefficient when operated any where near rated output. That is different than a standard FET. Interestingly enough, I can detect a barley measurable positive coefficient at very low drive levels but, they act just like bipolar transistors at normal operating levels. The higher voltage ones are extremely susceptible to thermal runaway without careful bias design. PS: While I have seen this same characteristic in several 50 volt MOSFET's, I am curious to know if anyone can confirm the coefficient seen with the BLF-188XR? [/QUOTE]

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