The main focus is the Gate, it has to make the part stay off when it should - and on when it's needed - then make sure it returns back to off when not needed.
Ever wonder the numbering on some MOSFET like the 13N10? The way Fairchild used to look at it - The last two digits refer to the voltage rating in tens of volts - 12N08 is a PREVIOUS Generation part with only 80 Volt Rating from S to D - so 13N10 refers to 100 volts breakdown. IRF though - doesn't use that convention - but the higher the last two digits are - the greater the Breakdown voltage is.
This also has a reciprocal effect - the higher breakdown voltages means thicker layering of the part - so in RF sense - this limits it's ability to pass a signal without propagation issues - reflections - timing problems. Light is a finite speed - RF thru a medium like Silicon is also only "so fast" as it travels a given distance thru a junction before the cycle reverses.
Bipolar had the same problem with junctions - their thickness, surface area and doping - made limits for the amount of power and the speed they can pass and control and how well they could handle INDUCTIVE loading and the back EMF from the device it controlled (Remember TRIACS? Dimmer switches mostly but also variable speed driver units for motors and is what makes Switching Power supplies more favorable - in AC power units)
Earlier MOSFET designs had more "coupling" problems - where the device would turn on - then stay on - and never turn off until you removed the power from all the leads (Source, Drain and Gate) - hence self-destruct. All due to it's construction - the electrical field passing thru the device - once it turned on, latched it on. More like SCR's you'd find it in Power supplies across the load from the source, supplied/designed to sense overload and "fire" - acting like a dead-short, to trigger a breaker - pop the breaker to remove the power fault.
They are the offspring of the original FETs' you use in RX IF mixers the typical Grant or Cobra or PC-78 uses (SK192)
Nowadays, they are constructed differently - they have a "built in" protection to allow the device to turn off when the gate goes neutral - (no applied voltage Positive Or Negative). That is where we have our problem - how much do you use to "turn them on" then, once they're done - how much power can remain at the Gate so they can turn off when you don't need it?
On top of that is -
How much Gate voltage or drive is needed to make the MOSFET work linearly? As in we know Class AB biasing in Bi-polars, you need that for SSB to even work - Base gets "just enough" so when RF is applied - it is ready to amplify, but once that RF is gone - we're back to waiting around for that next wave to hit...and we have to stay off until that wave comes.
MOSFET is different - it can sit there even with some noise on that gate - because the electrical field the Gate has to produce is not yet strong enough to pass a barrier to reach the region it needs to make active to turn the device on - so it just sits there looking back at you until a level is reached and WHAM - we're off and running. Just don't forget they generate a field as they pass power across the junctions - so that too affects how these devices act when they are on, and how well we can turn them off.
So we have to step back and look at how Tubes can operate - two plates, one called Cathode, other the Plate and place a screen called a Grid in between the two - house it in a vacuum and make it work. Apply a voltage and figure out what goes where...
Now you can begin to understand the datasheets importance - because not every part of the same lot, manufacturer or amongst the brands - have or use the same "gate voltage" to trigger them on.
It's why you see Min, TYP, Max columns on datasheets - it is the variances of the same part amongst their own testing and a quality issue we have to pay attention to.
Why some people tend to overblow the "matched set" offer - is due to this, and overrated to a point, but it can pose a problem for us if we don't allow for it.
More than likely what happened in that radios' situation - the Gate "blewup" the part because of lack of understanding how that part works, not from overvolt - an ERF can easily handle up to 100Volts and not budge. So for that part to "blow" means something else - the sensitivity as well as level of drive needed for such a part - they are EXTREMELY high gain devices - worse than a Bipolar - but also better than a Bipolar due to the efficiency or VERY SMALL SIGNAL levels can make BIG POWER Changes. But cannot operate as "Linearly" as a bipolar because it has no true influence on the power passing thru the device that Bipolar's can.
They've come a long way - but there's still a lot more to go...