Oh, where to start? I have been wanting to write a response to this thread, (the OP, or original poster) for quite some time now, but I have debated on weather or not it would start an argument, or just be disregarded by “CB MYTH” type logic, if you can call it that. (the logic part)
I mean, according to the video, we have an “unfair advantage” and “pure science” working against us here. Ok, enough with the useless sarcasm, if I continued, this post would have the same value as that video, close to zero.
First of all, let's start with the basics..there are several differences in the transistors that can clearly be seen using a simple test fixture (these things the secret tester must have missed):
Let's start from the base of the transistor forward, shall we?
Section A:
1: Input impedance is different for a set amount of RF drive.
2: Input impedance is different for a set amount of drive at a given frequency.
3: Input impedance curve across a change in frequency is different vs the Toshiba.
4: Input impedance curve for varying drive levels changes at a different rate than the Toshiba.
5: Bias current is different for different temperatures than the Toshiba for different conduction angles and collector (idle) current.
Section B:
1: Output impedance is different and follows a different curve for power output.
2: Output impedance follows a different curve for a different amount of VCC. While this is normal for a BJT to exhibit this behavior, it is different than the Toshiba.
3: Current requirement is different for a different amount if Pout at same VCC.
4: Gain is different...we will elaborate on that in detail in a moment.
5: Gain compression happens MUCH more quickly with the DEI transistors.
6: Idle current is different for the same VCC, and bias supplied at the same temperature of the device.
7: IMD performance gets much worse, much quicker with the DEI.
Now, let's talk about gain for a moment. (see section B, reason #4) In the video, the person behind the camera is stating that the reason the DEI transistors have a lower gain, and have gotten bad press (as if this was the only reason, I am not sure why they focused only on this aspect, one that we are about to blow to smithereens) is because that the gain was compared at DC. Ok, while the transistors will have a gain curve from the lowest frequency they are “capable” of and the highest, the statements that the DEI transistors have lower gain at DC and higher levels of gain at 27Mhz is just pure nonsense. Gain goes DOWN not up as you go up in frequency with these devices. In fact, in most HF amplifiers that cover the lower bands, you have to take that into consideration when you design the thing. It is true that certain devices will have a “sweet spot” but this isn't the case here. Then to go on and say that they are close to the Toshiba at 27Mhz is just flat out wrong based on all sorts of facts.
The fact is, the DEI transistors can be loosely at best called a substitute device, not a drop in replacement, and definitely NOT an exact replacement.
While it is true that in a zero bias amplifier, (CLASS C), that is mono-band, (11 meter CB in this case) is such a simple amplifier design, and where things like linearity, IMD, and other desirable traits of an amplifier are not important to the operator, it would be true that one could "fiddle" around with the circuit a little bit, and get the devices to play nice because a lot of the above mentioned could go unnoticed.
So we arrive at the conclusion:
A: The amplifier builders KNOW this, and don't care.
B: They don't know, and don't have the skill-sets to know the difference (most likely the case based on what I have seen)
Is it any coincidence that we see things like a "motor maul" which actually a very simple design, things like unregulated power supplies being used in RF amplifiers, and other horrible slapped together nonsense only in the CB world and no where else? It's because they can get away with it.
Why, instead of trying to convince people that these cheap chinese transistors are just as good,.... why not come out with something impressive? If it's about the money, think about it... an amplifier manufacturer can EASILY build an amplifier that produces a ton more output for cheaper than they would be buying up these DEI transistors for. They would also have a higher profit margin as well. There are many devices out there that are mosfet based (NO-NOT THE SAME RE-PURPOSED SWITCHING POWER SUPPLY ONES, I MEAN REAL RF DEVICES) that can withstand excessive (I'm talking 30:1) SWR without blowing, require VERY simple bias circuits, can be driven hard without blowing, and can be ran on 24-30 volts which would be easy to set up in a mobile using the same techniques that their "motor maul" boxes use to come up with the voltage. You can even build this device yourself, it is very easy. (which is why I believe they figured the concept out)
What I don't believe they have figured out, is how to build an amplifier that resembles anything other than a cut and copy design of the same old push pull bipolar transistor amplifiers using broadband transformers and combiners that has been around since the dinosaurs and put it slapped together in a big metal box on a big metal copper clad board. Ever see their bias design? It's decades old, and a poor attempt at the Motorola EB63 bias method which wasn't even supposed to be used in the real world, but only for testing. There are tons of better ways to do it, but I have never seen it in a CB amplifier from these guys. I am not sure of in the video, if you look closely, that note that it written that says “test your sh*t” is codeword for something else or not, but it must be codeword for something else. No reputable manufacturer using secret science testing methods of the trade that are some type of new testing technique on a BJT (bipolar junction transistor) that has existed for over half a century.
Do I seem to be targeting them? Yeah, admittedly a little, but they asked for it when they started being self-proclaimed experts for the purpose of separating unknowing people from their money.
I understand that they are an amp builder, and they have to pay their bills...I get it. I also get the fact that they have a problem to deal with, seeing that the Toshiba transistors are not made anymore and when you can get them, it does not make sense to pay the dollar amount for something that will cut into your profit margins when you can simply blind users from the truth and call a chinese substitute “just as good” or “equivalent” to what you were using before. BUT, in my opinion, it would have been better not to say anything, other than to post this ridiculousness and be called out on it as well as making claims that their (cringe) “research” is based on science, and there are no “smoke and mirrors” here. This is just begging for someone, like myself that would normally not care to bother, to clearly do everything possible, using no hidden super-duper-secret test equipment to prove, using real world data and test results, using recognized name equipment to show just how bogus the claims are.
Oh, and on a side note, I would be more than happy to post a couple videos if need be, with all equipment out in the open, no secret, unfair advantage, the wizard of oz, man behind the curtain BS.
...runna pile-up on 6m SSB