The approach seems to be more focused on how the semiconductor junction would use the bias in their DUT, so really much of what is being done to "bias" the device is aftermarket, we're doing the research for them.
At least that's how HG and other Chinese look at it. Give the FCC a datasheet and let their ignorance and inability to translate from their language becomes their bane.
So Motorola and Toshiba - even though competitors, worked together to formulate the very information on the Datasheet that even the Chinese don't seem to quite fully grasp all that data - at least they copied it and seem to know what they're doing - just we're doing the legwork the Former makers of these now-cloned parts - did.
So Carbon Composition versus the Thermistor - whether being similar to a PIN diode or cruddy intrinsic layered device - we also must realize that as we're looking for Diodes that work as Bias devices, let alone the Thermistor and it's composition - many are not getting the "profile just right" I'm seeing it being due to one thing...
We're being fooled - seriously.
Look here, and to me, what the world has done, this is where it starts...
https://www.worldwidedx.com/threads/mike-debunks-shottky-diode-receive-mod.236937/
The above? It's the thread I got bashed about as Reinventing the wheel for Mike Radio Review is a good example of how the newer makers are cheapening up the diodes and flooding the market with these newer replacements.
Everyone's being led (seems to) believe that they are better, only to find out - once installed, they were better off keeping it STOCK with the older USA made carp - it's their money - yeah, it hurts us all when people want more and try to make the old Model-T a Formula 1 .
Look Ma!
It's the
Made In Michigan Man!
Why? Well, there is a BIG difference in junction performance profiles between of Schottky diodes versus the keeping with the OEM germanium or even the Doped Silicon design of the radio - per the 2SC2999 Receive mods that plagued the net and still do.
Why does this matter? Well, you used to have 3 layers, now we're lucky to just have two...for many a upstart semiconductor manufacturer (Read: Overseas) - the Schottky is far easier to make than the two layer P - N - then Meld - PIN-type (PN Junction) of junction component.
At least the old days, the Germanium types had the Galena-Crystal and Cats whisker which had inherited impedance and resistive trait that had it's own built in high-cut roll off filtering that made that radio have the warm sound.
When you look at it,
The Galena - Cats' Whisker onto the Foxhole Radio - both construction types ARE
similar to the now adopted Schottky design - single junction and heat applied under pressure
it was inevitable that the PN junction types would eventually be re-replaced by the older design
- now new again...
Not to be outdone,
In earlier models - the detector was a tube...
Now? That isn't happening because of the Schottky design is NOT the same junction nor even the same material...the Pellet is singular, and the Weld to the now-beholden bonded metal is where that junction now occurs, no longer pure doped or otherwise...
So that changes everything when it comes to biasing the PN types.
We're missing the other half...we are biasing PN junctions being that they are
Dual-Layer single junction devices, but Schottky designs have SINGLE LAYER using single junction devices,
The voltage drop - there's your problem; from ~1 to 0.7V now gone down to 0.3V or
LESS Forward Voltage Drop.
Or at least we should review the PN profiles versus the Schottky we seem to evolving to -the PN had it's
intrinsic barrier of two layers and the intrinsic bond - Schottky's barrier is different - so the performance between the two is now different = temperature or performance changes.
So I love your idea of the Thermistor - but the Diode it replaces can still be "used" you just have to change your approach from Parallel or Both Series and Parallel - so,
Yes, I agree!
