Actually those RM and Zetagi amps are not very good designs, and thus don't really represent the current state-of-the-art. Today's MOSFET technology is nothing short of incredible really.
You'd be pretty hard-pressed to find any modern commercial high-power RF amplifiers that are still using BJTs, due to the fact that FETs have some very nice endearing qualities such as higher input impedance (this just means that FETs don't require built-in impedance matching) and the fact that they are voltage-controlled devices instead of current-controlled like BJTs. This is a huge benefit when it comes to biasing. A bias circuit for a FET doesn't need to provide any significant current as opposed to a bias circuit for a BJT which must source a good deal of current, so a simple variable resistor in a voltage divider is sufficient. Also, FETs are less prone to thermal runaway so thermal tracking of the bias voltage is not always required which simplifies things even more.
The very latest high-powered RF FETs produce over 1.2kW across HF VHF and much of UHF (1.8-600MHZ). Freescale's latest offerings withstand up to a 65:1 SWR mismatch conditions at full output. NXP is claiming over 100:1 SWR ruggedness from their comparable devices. This is unheard of from BJTs.