Sorry to bring this back alive, but there are a couple versions of this RT1 / IRFZ24N Fet.
942-IRFZ24NPBF-
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 17 A
Rds On - Drain-Source Resistance: 70 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 13.3 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 45 W
$0.56
and
IRFZ24PBF-BE3
Package / Case: TO-220AB-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 17 A
Rds On - Drain-Source Resistance: 100 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 25 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 60 W
$1.18 each
Can either one of these be used in a RCI-69 Base that uses four- RT1's? I see difference in threshold voltage and 15 watts difference in Power dissipation.
I've ordered both types just to have but I have the 2030+s in the 69 base right now. I have 520's and tried them, seems I had higher dead key on the 520's but the 2030+s has lower dead key and less control on RF power knob but the 2030+ seems to swing a bit better. I ultimately want to put the correct finals back in but was wondering if either of these two versions would work or one would be better output than the other?
942-IRFZ24NPBF or IRFZ24PBF-BE3? Sorry for the bold typing, it came from copy and paste. But the reason I blew one of the original RT1s was a intermittent shorted jumper now corrected.
Thanks,
Rhinoky
942-IRFZ24NPBF-
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 17 A
Rds On - Drain-Source Resistance: 70 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 13.3 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 45 W
$0.56
and
IRFZ24PBF-BE3
Package / Case: TO-220AB-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 17 A
Rds On - Drain-Source Resistance: 100 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 25 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 60 W
$1.18 each
Can either one of these be used in a RCI-69 Base that uses four- RT1's? I see difference in threshold voltage and 15 watts difference in Power dissipation.
I've ordered both types just to have but I have the 2030+s in the 69 base right now. I have 520's and tried them, seems I had higher dead key on the 520's but the 2030+s has lower dead key and less control on RF power knob but the 2030+ seems to swing a bit better. I ultimately want to put the correct finals back in but was wondering if either of these two versions would work or one would be better output than the other?
942-IRFZ24NPBF or IRFZ24PBF-BE3? Sorry for the bold typing, it came from copy and paste. But the reason I blew one of the original RT1s was a intermittent shorted jumper now corrected.
Thanks,
Rhinoky