Robb - Turning times are better on the IRF520 - so you may need to stick with it...
IRF530 first...from VISHAY
From VISHAY - THE IRF520
Eww ouch wrong duped pic...
The 530 capacitance is higher - making it S L O W E R in response times.
To add, the capacitive effects also affect Attack and Decay times - here's a quikie look at the 13N10...
So even though the 13n10 are closer to the IRF530's in times, they have less residual GATE capacitance - which affects how the RF wave propagates into the part - sits there and drains off...
So in some instances the 13N10 - it's about the performance of a slower part but has a big advantage by using less gate "Coulomb charge transfer" or - how long it takes the capacitors in the circuit to "fill up " and exert their characteristics on the field effect device waiting for that charge...Gate Capacitance plays a role in how efficiently the Gate can make the junction switch states but in its design if it's small it can make the device act more like bipolar near the top and bottom of those rise and fall times - giving it an advantage of slope is more closer to the ideal sine wave it needs to be at the frequencies we can use it at..
It affects the rise and fall times, and you need to refer to the DUT circuit it may reflect other issues that pertain to how it performs in a highly inductive load versus RF.
IRF530 first...from VISHAY
From VISHAY - THE IRF520
Eww ouch wrong duped pic...
The 530 capacitance is higher - making it S L O W E R in response times.
To add, the capacitive effects also affect Attack and Decay times - here's a quikie look at the 13N10...
So even though the 13n10 are closer to the IRF530's in times, they have less residual GATE capacitance - which affects how the RF wave propagates into the part - sits there and drains off...
So in some instances the 13N10 - it's about the performance of a slower part but has a big advantage by using less gate "Coulomb charge transfer" or - how long it takes the capacitors in the circuit to "fill up " and exert their characteristics on the field effect device waiting for that charge...Gate Capacitance plays a role in how efficiently the Gate can make the junction switch states but in its design if it's small it can make the device act more like bipolar near the top and bottom of those rise and fall times - giving it an advantage of slope is more closer to the ideal sine wave it needs to be at the frequencies we can use it at..
It affects the rise and fall times, and you need to refer to the DUT circuit it may reflect other issues that pertain to how it performs in a highly inductive load versus RF.
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